Forming Conductive STI Liners for FinFETs

A method of forming a semiconductor device, the method comprising:

• etching a semiconductor substrate to form a recess in the semiconductor substrate, wherein an un-recessed portion of the semiconductor substrate between opposite portions of the recess forms a semiconductor strip;
• forming a first dielectric layer on sidewalls of the semiconductor strip;
• forming a conductive liner on sidewalls of the first dielectric layer;
• filling the recess to form an isolation region;
• recessing the conductive liner and the isolation region, wherein a portion of the semiconductor strip forms a semiconductor fin over a remaining portion of the isolation region;
• forming a gate dielectric on sidewalls and a top surface of the semiconductor fin;
• and
• forming a gate electrode overlying the gate dielectric, wherein the gate electrode and the gate dielectric overlap the conductive liner, and wherein the gate dielectric and the gate electrode form parts of a Fin Field-Effect Transistor (FinFET).

A method of forming a semiconductor device, the method comprising:

• forming a fin extending from a substrate;
• forming an “L” shaped conductive liner on opposing sidewalls of the fin;
• forming a first dielectric layer over the “L” shaped conductive liner, an upper portion of the fin extending above an uppermost surface of the “L” shaped conductive liner and the first dielectric layer;
• forming a gate dielectric over the upper portion of the fin;
• and
• forming a gate electrode over the gate dielectric.