Back to results
US 2016/0111525 A1Published application
Fin formation in fin field effect transistors
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Bruce B. Doris, Hong He, Ali Khakifirooz, Yunpeng Yin
Life of this patent
Estimating the term…
Abstract
A method of forming a semiconductor device that includes forming a silicon including fin structure and forming a germanium including layer on the silicon including fin structure. Germanium is then diffused from the germanium including layer into the silicon including fin structure to convert the silicon including fin structure to silicon germanium including fin structure.
Claims19
A method of forming a semiconductor device comprising:
- forming a silicon including fin structure having an upper surface that is planar to a (100) crystal plane and a sidewall surface that is planar to a (100) crystal plane;
- forming a germanium including layer on the upper surface and sidewalls surface of the silicon including fin structure;
- and
- diffusing germanium from the germanium including layer into the silicon including fin structure to convert the silicon including fin structure to silicon germanium including fin structure.
1 more element
A method of forming a semiconductor device comprising:
- forming a plurality of silicon including fin structures;
- forming a gate structure on a channel portion of the plurality of silicon including fin structures;
- forming a germanium including layer on exposed portions of the plurality of silicon including fin structures on opposing sides on the channel portion;
- forming dielectric regions between adjacent fin structures of the plurality of silicon including fin structures;
- and
- diffusing germanium from the germanium including layer into the plurality of silicon including fin structures to convert at least one of a source region portion of the plurality of silicon including fin structures and a drain region portion of the plurality of silicon including fin structures to a silicon germanium including material.
3 more elements
A method of forming a semiconductor device comprising:
- forming a plurality of silicon including fin structures;
- forming a replacement gate structure on a channel portion of the plurality of the silicon including fin structures;
- forming a dielectric material on a source region portion and a drain region portion of the plurality of silicon including fin structures;
- removing the replacement gate structure to expose the channel portion of the plurality of silicon including fin structures;
- forming a germanium including layer on the channel portion of the plurality of silicon including fin structures;
- and
- diffusing germanium from the germanium including layer into the channel portion of the silicon including fin structures to convert the channel portion of the plurality of the silicon including fin structures to a silicon germanium including material.
4 more elements
Dependencies are inferred from the claim text.