Semiconductor devices including a gate core and a fin active core and methods of fabricating the same

A method of fabricating a semiconductor device, comprising:

• forming an isolation region in a substrate, the substrate comprising a field area and an active area, and the isolation region defining a fin active region in the active area;
• forming a sacrificial first field gate pattern on the isolation region of the field area and forming a sacrificial first fin gate pattern and a sacrificial second fin gate pattern on the fin active region and the isolation region of the active area;
• forming a first field gate cut zone comprising a first recess exposing the isolation region by removing a portion of the sacrificial first field gate pattern and a fin gate cut zone comprising a second recess exposing the fin active region by removing a portion of the sacrificial second fin gate pattern;
• forming a fin active recess by removing a portion of the fin active region exposed in the second recess of the fin gate cut zone;
• forming a first field gate core, a fin gate core, and a fin active core in the first recess of the first field gate cut zone, the second recess of the fin gate cut zone, and the fin active recess, respectively, wherein the first field gate core, the fin gate core, and the fin active core comprise the same material;
• forming a first fin gate electrode opening by removing a portion of the sacrificial first fin gate pattern;
• and
• forming a first fin gate pattern in the first fin gate electrode opening.

A method of fabricating a semiconductor device, comprising:

• forming a fin active region in a first region of a substrate, the substrate comprising the first region and a second region;
• forming an isolation region in the first region and the second region of the substrate, the isolation region being adjacent the fin active region;
• forming a first gate line in the first region of the substrate, the first gate line traversing the fin active region and extending on the isolation region;
• forming a second gate line extending on the isolation region in the second region of the substrate;
• concurrently removing a portion of the first gate line disposed on the fin active region to form a first recess in the first gate line and a portion of the second gate line to form a second recess in the second gate line;
• removing a portion of the fin active region exposed by the first recess of the first gate line to form a third recess in the fin active region;
• and
• forming a first insulating core pattern in the first and third recesses and a second insulating core pattern in the second recess.