Method of manufacturing a semiconductor device including a barrier structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPo-Chun Liu, Chi-Ming Chen, Chen-Hao Chiang, Chung-Yi Yu, Chia-Shiung Tsai, Xiaomeng Chen
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Abstract
A method of manufacturing a semiconductor device includes forming a barrier structure over a substrate. The method further includes forming a channel layer over the barrier structure. The method further includes depositing an active layer over the channel layer. The method further includes forming source/drain electrodes over the channel layer. The method further includes annealing the source/drain electrodes to form ohmic contacts in the active layer under the source/drain electrodes.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming a barrier structure over a substrate;
- forming a channel layer over the barrier structure;
- depositing an active layer over the channel layer;
- forming source/drain electrodes over the channel layer;
- and
- annealing the source/drain electrodes to form ohmic contacts in the active layer under the source/drain electrodes.
A method of manufacturing a semiconductor device, the method comprising:
- depositing a p-doped buffer layer over a substrate;
- growing a barrier layer over the p-doped buffer layer;
- forming a channel layer over the barrier layer, wherein the barrier layer is configured to block diffusion of a p-type dopant in the p-doped buffer layer into the channel layer;
- depositing an active layer over the channel layer;
- forming source/drain electrodes over the channel layer;
- and
- forming a gate structure over the channel layer.
A method of manufacturing a semiconductor device, the method comprising:
- growing a first barrier layer over a silicon-containing substrate;
- depositing a p-doped buffer layer over the first barrier layer, wherein the first barrier layer is configured to block silicon diffusion from the silicon-containing substrate into the p-doped buffer layer;
- growing a second barrier layer over the p-doped buffer layer;
- forming a channel layer over the second barrier layer, wherein the second barrier layer is configured to block diffusion of a p-type dopant in the p-doped buffer layer into the channel layer;
- and
- depositing an active layer over the channel layer.
Dependencies are inferred from the claim text.