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US 2016/0111509 A1Published application
Metal-oxide-semiconductor transistor device having a drain side dummy contact
AssigneeUnited Microelectronics Corp.
InventorsKun-Huang Yu, Shih-Yin Hsiao
Life of this patent
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Abstract
A MOS transistor device includes a substrate including a gate formed thereon, and a spacer being formed on a sidewall of the gate; a source region and a drain region formed in the substrate; and at least a first dummy contact formed above the substrate on a drain side of the gate. More important, the first dummy contact is formed apart from a surface of the substrate.
Claims21
A metal-oxide-semiconductor (MOS) device comprising:
- a substrate comprising a gate formed thereon, and a spacer being formed on sidewalls of the gate;
- a gate contact electrically connected to the gate;
- a source region and a drain region formed in the substrate;
- and
- at least a first dummy contact formed above the substrate on a drain side of the gate, the first dummy contact being formed apart from a surface of the substrate, and the first dummy contact being electrically connected to the gate contact.
2 more elements
(canceled)
A method for manufacturing a metal-oxide-semiconductor (MOS) transistor device, comprising:
- providing a substrate comprising at least an isolation structure formed therein;
- forming a metal-oxide-semiconductor (MOS) device on the substrate, the MOS transistor device comprising a gate, a source region, a drain region and a spacer;
- and
- forming a first dummy contact on a drain side of the gate, the first dummy contact being formed apart from a surface of the substrate.
1 more element
A metal-oxide-semiconductor (MOS) device comprising:
- a substrate comprising a gate formed thereon, and a spacer being formed on sidewalls of the gate;
- an isolation structure formed in the substrate;
- a source region and a drain region formed in the substrate, the drain region being spaced apart from the gate by the isolation structure;
- and
- at least a first dummy contact formed above the substrate and the isolation structure on a drain side of the gate, the first dummy contact being formed apart from a surface of the substrate and a surface of the isolation structure.
2 more elements
Dependencies are inferred from the claim text.