Electronic device comprising conductive regions and dummy regions

A method, comprising:

• forming a trench in a front surface of a substrate;
• depositing an insulating liner on the walls and floor of the trench;
• depositing a conductive gate electrode material within the trench;
• dividing the conductive gate electrode material within the trench into a first conductive gate portion along a first wall and a first portion of the floor within said trench and a second conductive gate portion along a second wall and a second portion of the floor within said trench;
• depositing an insulating portion within the trench electrically isolating the first conductive gate portion from the second conductive gate portion.

A method, comprising:

• forming an epitaxial layer of a second type of conductivity over a layer of semiconductor material of a first type of conductivity;
• forming a body layer of the first type of conductivity on the epitaxial layer;
• forming a trench extending through the body layer and partially into the epitaxial layer;
• forming a source region of the second type of conductivity extending into the body layer at a first side of said trench;
• lining side walls and a bottom of the trench with an insulating liner;
• forming a gate region of conductive material in said trench along a first side wall facing the source region;
• forming a dummy gate region of conductive material in said trench along a second side wall opposite the first side wall;
• filling the trench with insulating material to electrically isolate the gate region from the dummy gate region.