Semiconductor Device with Breakdown Preventing Layer
AssigneeSensor Electronic Technology, Inc.
InventorsGrigory Simin, Michael Shur, Remigijus Gaska
Life of this patent
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Abstract
A semiconductor device with a breakdown preventing layer is provided. The breakdown preventing layer can be located in a high-voltage surface region of the device. The breakdown preventing layer can include an insulating film or a low conductive film with conducting elements embedded therein. The conducting elements can be arranged along a lateral length of the insulating film or the low conductive film. The conducting elements can vary in at least one of composition, doping, conductivity, size, thickness, shape, and distance from the device channel along a lateral length of the insulating film or the low conductive film, or in a direction that is perpendicular to the lateral length.
Claims20
A lateral semiconductor device comprising:
- a device channel;
- a first contact on a first end of the device channel;
- a second contact on a second end of the device channel opposite the first end thereof, wherein the first and second contacts are located on a first side of the device channel;
- and
- a breakdown preventing layer located on the first side of the device channel in at least a portion of a spacing between the first contact and the second contact, wherein the breakdown preventing layer is a continuous layer within the portion of spacing between the first contact and the second contact, the breakdown preventing layer having a top surface free from contact thereover by each of the first contact and the second contact, and side surfaces that are vertically planar with all side surfaces of the first contact and the second contact, and wherein the breakdown preventing layer comprises:
- an insulating film;
- and
- a plurality of conducting elements embedded in the insulating film, wherein the plurality of conducting elements are arranged along a lateral length of the insulating film.
A method, comprising:
- creating a design for a lateral semiconductor device, wherein the design for the lateral semiconductor device defines a device including:
- a device channel;
- a first contact on a first end of the device channel;
- a second contact on a second end of the device channel, wherein the second end is opposite the first end, and wherein the first and second contacts are located on a first side of the device channel;
- and
- a breakdown preventing layer located on the first side of the device channel in at least a portion of a spacing between the first contact and the second contact, wherein the breakdown preventing layer is a continuous layer within the portion of spacing between the first contact and the second contact, the breakdown preventing layer having a top surface free from contact thereover by each of the first contact and the second contact, and side surfaces that are vertically planar with all side surfaces of the first contact and the second contact, and wherein the breakdown preventing layer comprises:
- an insulating film;
- and
- a plurality of conducting elements embedded in the insulating film, wherein the plurality of conducting elements are arranged along a lateral length of the insulating film;
- and
- fabricating the lateral semiconductor device according to the design.
A lateral semiconductor device, comprising:
- a device channel;
- a first contact on a first end of the device channel;
- a second contact on a second end of the device channel opposite the first end thereof;
- and
- a breakdown preventing layer located between the first contact and the second contact, wherein the breakdown preventing layer comprises:
- a plurality of conducting elements embedded in the breakdown preventing layer, wherein the plurality of conducting elements are arranged along a lateral length of the breakdown preventing layer, wherein at least one of the conducting elements vary in one of composition, doping, conductivity, size, thickness, shape and distance from the device channel.
Dependencies are inferred from the claim text.