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AssigneeHitachi, Ltd.
InventorsDigh HISAMOTO, Keisuke KOBAYASHI, Naoki TEGA, Toshiyuki OHNO, Hirotaka HAMAMURA, Mieko MATSUMURA
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A MOSFET using a SiC substrate has a problem that a carbon-excess layer is formed on a surface by the application of mechanical stress due to thermal oxidation and the carbon-excess layer degrades mobility of channel carriers. In the invention, (1) a layer containing carbon-carbon bonds is removed; (2) a gate insulating film is formed by a deposition method; and (3) an interface between a crystal surface and the insulating film is subjected to an interface treatment at a low temperature for a short time. Due to this, the carbon-excess layer causing characteristic degradation is effectively eliminated, and at the same time, dangling bonds can be effectively eliminated by subjecting an oxide film and an oxynitride film to an interface treatment.
A silicon carbide semiconductor device comprising:
A silicon carbide semiconductor device comprising:
A method for manufacturing a silicon carbide semiconductor device including a source region and a channel region that are disposed on an upper surface of a silicon carbide substrate, and a gate insulating film on the channel region, the method comprising:
Dependencies are inferred from the claim text.