High-Voltage Normally-Off Field Effect Transistor With Channel Having Multiple Adjacent Sections

A field effect transistor, comprising:

• a source electrode, a drain electrode, and a first gate and a second gate each disposed between the source electrode and the drain electrode;
• a channel extending from the source electrode to the drain electrode, wherein the channel includes a plurality of adjacent sections, the plurality of adjacent sections including:
• a first section connected to the first gate and located adjacent to the source electrode, wherein the first section is a normally-off channel;
• a second section located between the first section and the drain electrode, wherein the second section is a normally-on channel;
• and
• a third section connected to the second gate and located between the second section and the drain electrode;
• a gap-filling material separating the first gate from the second gate without contacting either of the gates;
• and
• a charge-controlling electrode connecting the source electrode to the gap-filling material while physically isolated from the first gate and the second gate, wherein the charge-controlling electrode extends from the source electrode over the first gate and over at least a portion of the gap-filling material.

A method of fabricating a device, comprising:

• forming a source electrode, a drain electrode, and a gate disposed there between;
• forming a gap-filling material separating the gate from the drain electrode, wherein the gap-filling material is connected to the drain electrode without contacting the gate;
• forming a channel extending from the source electrode to the drain electrode, wherein the channel includes a plurality of adjacent sections, the plurality of adjacent sections including:
• a first section connected to the gate and located adjacent to the source electrode without contact thereof, wherein the first section is a normally-off channel;
• and
• a second section located adjacent the first section and connected to the drain electrode and the gap-filling material, wherein the second section has a surface that completely contacts the drain electrode and the gap-filling material, and wherein the second section is a normally-on channel;
• and
• forming a charge-controlling electrode connected to the source electrode, wherein the charge-controlling electrode extends from the source electrode over the gate without contact thereof and over at least a portion of the gap-filling material with contact thereof.