Nanowire device with improved epitaxy

A nanowire device with improved epitaxy comprising:

• a substrate, wherein the substrate comprises a bulk substrate, an oxide layer, and an extremely thin silicon (ETSOI) layer, wherein the ETSOI has a (100) crystallographic orientation;
• one or more vertically stacked nanowires on top of the substrate;
• a gate attached to the substrate, covering the stacked nanowires;
• a plurality of spacers attached to the gate;
• and
• an epitaxy layer grown up from the substrate, wherein the epitaxy layer is situated on either side of the gate and covers the nanowires.

A method for fabricating a nanowire device with improved epitaxy, the method comprising:

• forming a nanowire stack on a substrate, the nanowire stack having one or more sacrificial layers and one or more nanowires, wherein the substrate comprises a bulk substrate, an oxide layer, and an extremely thin silicon (ETSOI) layer, wherein the ETSOI layer comprises a (100) crystallographic orientation;
• removing the sacrificial layers;
• depositing and patterning a gate material over the nanowire stack, the gate material having sidewalls, wherein the gate material comprises a high-K material;
• covering the sidewalls of the gate material with a spacer layer;
• chopping the one or more nanowires, wherein the nanowires are the same length as the gate material;
• and
• epitaxially growing an in-situ doped layer comprised of doped silicon from the ETSOI layer.