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US 2016/0111491 A1Published application
Fin device with blocking layer in channel region
AssigneeGlobalfoundries Inc.
InventorsAjey P. Jacob, Min-Hwa Chi
Life of this patent
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Abstract
A semiconductor device includes a fin defined on a substrate and a gate electrode structure formed above the fin. A channel region of the device is defined beneath the gate electrode structure and source/drain regions of the fin are defined adjacent the gate electrode structure. A dielectric layer is defined at least in the channel region. The dielectric layer includes oxygen and at least one of nitrogen, carbon or fluorine.
Claims19
A semiconductor device, comprising:
- a fin defined on a substrate;
- a gate electrode structure formed above said fin, wherein a channel region of said device is defined beneath said gate electrode structure and source/drain regions of said fin are defined adjacent said gate electrode structure;
- and
- a dielectric layer defined at least in said channel region, said dielectric layer comprising oxygen and at least one of nitrogen, carbon or fluorine.
1 more element
A semiconductor device, comprising:
- a fin defined on a substrate;
- a gate electrode structure formed above said fin, wherein a channel region of said device is defined beneath said gate electrode structure and source/drain regions of said fin are defined adjacent said gate electrode structure;
- and
- a dielectric layer defined in said fin, said dielectric layer comprising oxygen and at least one of nitrogen, carbon or fluorine.
1 more element
A semiconductor device, comprising:
- a fin defined on a substrate:
- a gate electrode structure formed above said fin, wherein a channel region of said device is defined beneath said gate electrode structure;
- source/drain regions defined in said fin adjacent said gate electrode structure, said source/drain regions comprising an epitaxial silicon/germanium material;
- and
- a dielectric layer defined at least in said channel region, said dielectric layer comprising oxygen and at least one of nitrogen, carbon or fluorine.
2 more elements
Dependencies are inferred from the claim text.