Thin film transistor array panel and organic light-emitting display apparatus including the same

A thin film transistor (TFT) circuit panel device comprising:

• a substrate comprising a major surface;
• a driving TFT disposed over the substrate;
• a storage capacitor comprising a first electrode integrated with a driving gate electrode of the driving TFT into a single electrode, a second electrode disposed over the first electrode and insulated from the first electrode, and a storage insulating layer formed between the first electrode and the second electrode;
• a driving gate insulating layer disposed between the substrate and the driving gate electrode;
• a lower patterned insulating layer disposed over the substrate and formed of the same material as the driving gate insulating layer;
• a patterned electrode disposed over the lower patterned insulating layer and formed of the same material as the driving gate electrode;
• a top patterned insulating layer disposed over the patterned electrode and formed of the same material as the storage insulating layer;
• and
• an interlayer insulating layer formed to cover the storage capacitor and the top patterned insulating layer,
• wherein the lower patterned insulating layer, the patterned electrode, and the top patterned insulating layer have the same horizontal length in a section taken perpendicular to the major surface to form a patterned multi-layer structure spaced from the driving TFT when viewed in a viewing direction perpendicular to the major surface,
• wherein the interlayer insulating layer is formed of an organic material.

An organic light-emitting display apparatus comprising:

• a substrate comprising a major surface;
• and
• a plurality of pixels disposed over the substrate,
• each of the plurality of pixels comprising:
• a driving thin film transistor (TFT) and a gate line disposed over the substrate;
• a storage capacitor comprising a first electrode integrated with a driving gate electrode of the driving TFT into a single electrode, a second electrode disposed over the first electrode and insulated from the first electrode, and a storage insulating layer formed between the first electrode and the second electrode;
• a driving gate insulating layer disposed between the substrate and the driving gate electrode;
• a lower patterned insulating layer disposed over the substrate and formed of the same material as the driving gate insulating layer;
• a patterned electrode disposed over the lower patterned insulating layer and formed of the same material as the driving gate electrode;
• and
• a top patterned insulating layer disposed over the patterned electrode and formed of the same material as the storage insulating layer,
• wherein the lower patterned insulating layer, the patterned electrode, and the top patterned insulating layer have the same horizontal length in a section taken perpendicular to the major surface to form a patterned multi-layer structure spaced from the driving TFT when viewed in a viewing direction perpendicular to the major surface.