Electronic device and method for fabricating the same
AssigneeSK hynix Inc.
InventorsKwan-Woo Do, Ki-Seon Park
Life of this patent
Estimating the term…
Abstract
An electronic device includes a semiconductor memory that includes: an inter-layer dielectric layer which is formed over a substrate; a contact plug which is coupled with the substrate by passing through the inter-layer dielectric layer and has a protruding portion over the inter-layer dielectric layer; a first variable resistance pattern which is formed over the contact plug; and a protective layer which covers the first variable resistance pattern and a portion of sidewalls of the contact plug in such a manner that the sidewalls of the contact plug are exposed.
Claims17
1-20. (canceled)
An electronic device comprising a semiconductor memory that includes:
- a substrate;
- an inter-layer dielectric layer which is formed over the substrate;
- a contact plug which is coupled with the substrate by passing through the inter-layer dielectric layer and has a protruding portion over the inter-layer dielectric layer;
- a first phase change pattern which is formed over the contact plug;
- and
- a protective layer which covers the first phase change pattern and a portion of sidewalls of the contact plug in such a manner that exposes a remaining portion of the sidewalls of the contact plug.
An electronic device comprising a semiconductor memory that includes:
- a substrate;
- an inter-layer dielectric layer formed over the substrate;
- a contact plug formed over the substrate through the inter-layer dielectric layer and having a protruding portion over the inter-layer dielectric layer, the protruding portion having a height H1;
- and
- a variable resistance pattern formed over the contact plug and having a height H2 smaller than H1,
- wherein the protruding portion of the contact plug allows the variable resistance pattern to be self-isolated.
Dependencies are inferred from the claim text.