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US 2016/0111469 A1Published application
Solid-state image sensor
AssigneeNikon Corporation
InventorSatoshi SUZUKI
Life of this patent
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Abstract
A solid-state image sensor includes: a pixel array that includes first pixels, each having first and second photoelectric conversion units, and second pixels, each having third and fourth photoelectric conversion units; first to fourth transfer gates via which a signal charge respectively generated in the first to fourth photoelectric conversion units is respectively transferred to first to fourth charge voltage conversion units. At least one of a gate width, a gate length and an installation position of at least one transfer gate among the first to fourth transfer gates is altered to achieve uniformity in voltage conversion efficiency at the first to fourth charge voltage conversion units.
Claims12
A solid-state image sensor, comprising:
- a pixel array that includes first pixels, each having a first photoelectric conversion unit and a second photoelectric conversion unit arranged along a first direction, and second pixels, each having a third photoelectric conversion unit and a fourth photoelectric conversion unit arranged along a second direction;
- a first transfer gate via which a signal charge generated in the first photoelectric conversion unit is transferred to a first charge voltage conversion unit;
- a second transfer gate via which a signal charge generated in the second photoelectric conversion unit is transferred to a second charge voltage conversion unit;
- a third transfer gate via which a signal charge generated in the third photoelectric conversion unit is transferred to a third charge voltage conversion unit;
- and
- a fourth transfer gate via which a signal charge generated in the fourth photoelectric conversion unit is transferred to a fourth charge voltage conversion unit, wherein:
- at least one of a gate width, a gate length and an installation position of at least one transfer gate among the first transfer gate, the second transfer gate, the third transfer gate and the fourth transfer gate is altered so as to achieve uniformity in voltage conversion efficiency at the first charge voltage conversion unit, the second charge voltage conversion unit, the third charge voltage conversion unit and the fourth charge voltage conversion unit.
4 more elements
A solid-state image sensor, comprising:
- first pixels each including a first photoelectric conversion unit, which includes photoelectric conversion areas divided from each other along a horizontal direction, and a plurality of first transfer gates via which electric charges resulting from photoelectric conversion executed in the first photoelectric conversion unit are transferred to first charge voltage conversion units from the first photoelectric conversion unit;
- and
- second pixels each including a second photoelectric conversion unit, which includes photoelectric conversion areas divided from each other along a vertical direction, and a plurality of second transfer gates via which electric charges resulting from photoelectric conversion executed in the second photoelectric conversion unit are transferred to second charge voltage conversion units from the second photoelectric conversion unit, wherein:
- installation positions at which the first transfer gates are disposed at each of the first pixels are substantially identical to installation positions at which the second transfer gates are disposed at each of the second pixels.
1 more element
A solid-state image sensor, comprising:
- first pixels each including a first photoelectric conversion unit, which includes photoelectric conversion areas divided from each other along a horizontal direction, and a plurality of first transfer gates via which electric charges resulting from photoelectric conversion executed in the first photoelectric conversion unit are transferred to first charge voltage conversion units from the first photoelectric conversion unit;
- and
- second pixels each including a second photoelectric conversion unit, which includes photoelectric conversion areas divided from each other along a vertical direction, and a plurality of second transfer gates via which electric charges resulting from photoelectric conversion executed in the second photoelectric conversion unit are transferred to second charge voltage conversion units from the second photoelectric conversion unit, wherein:
- a gate width or a gate length assumed for the first transfer gates is different from the gate width or the gate length assumed for the second transfer gates so as to achieve uniformity in voltage conversion efficiency among the first charge voltage conversion units and the second charge voltage conversion units.
1 more element
Dependencies are inferred from the claim text.