Solid-state imaging apparatus, solid-state imaging apparatus manufacturing method, and electronic apparatus
AssigneeSony Corporation
InventorYusuke Tanaka
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Abstract
There is provided a solid-state imaging apparatus including a plurality of photoelectric conversion regions which photoelectrically convert light incident from a rear surface side of a semiconductor substrate, element isolation regions formed between the plurality of photoelectric conversion regions arranged in a matrix shape, and shielding members formed on upper surfaces of the element isolation regions. The element isolation regions have high impurity concentration regions of a high impurity concentration connected to at least a part of the shielding members.
Claims10
A manufacturing method of a solid-state imaging apparatus, comprising:
- forming a plurality of photoelectric conversion regions which photoelectrically convert light incident from a rear surface side of a semiconductor substrate;
- forming high impurity concentration regions, on rear surface sides of element isolation regions between the plurality of photoelectric conversion regions arranged in a matrix shape, the high impurity concentration regions having an impurity concentration higher than an impurity concentration of the element isolation regions;
- and
- forming shielding members, on upper surfaces of the high impurity concentration regions, connected to the high impurity concentration regions.
Dependencies are inferred from the claim text.