Method of manufacturing semiconductor device, semiconductor device and substrate processing apparatus

A substrate processing apparatus including:

• a process chamber configured to accommodate a substrate;
• a metal-containing source supply part configured to supply a metal-containing source into the process chamber;
• an oxidizing source supply part configured to supply an oxidizing source into the process chamber;
• a catalyst supply part configured to supply a catalyst into the process chamber;
• and
• a control unit configured to control the metal-containing source supply part, the oxidizing source supply part, and catalyst supply part to form a metal-containing oxide film on the substrate by performing a cycle a predetermined number of times, the cycle comprising:
• (a) supplying the metal-containing source to the substrate;
• (b) supplying the oxidizing source to the substrate;
• and (c) supplying the catalyst to the substrate.