Image Sensor Device and Method

A method of manufacturing a semiconductor device, the method comprising:

• manufacturing a first photosensitive diode within a substrate;
• manufacturing a second photosensitive diode within the substrate adjacent to the first photosensitive diode;
• forming a first color filter layer over the first photosensitive diode and the second photosensitive diode;
• removing a first portion of the first color filter layer from over the second photosensitive diode to form a first color filter;
• forming a second color filter layer over the first photosensitive diode and over the second photosensitive diode;
• removing a second portion of the second color filter layer to form a second color filter over the second photosensitive diode, wherein the removing the second portion of the second color filter layer exposes a first surface of the first color filter, the first surface facing the second color filter;
• and
• depositing a gap covering material to extend a height of the first color filter, wherein the depositing the gap covering material has a constant composition and forms a void between the first color filter and the second color filter, the void being devoid of solid material.