Circuitry for biasing light shielding structures and deep trench isolation structures

Imaging circuitry, comprising:

• a digital signal processor die;
• and
• an image sensor die mounted on the digital signal processor die, wherein the image sensor die comprises:
• a semiconductor substrate;
• photosensitive elements formed in the semiconductor substrate;
• and
• an in-pixel grid structure having slots aligned to the photosensitive elements, wherein the in-pixel grid structure receives a bias voltage.

A system, comprising:

• a signal processing unit;
• memory;
• a lens;
• input-output circuitry;
• and
• an imaging device that is stacked on the signal processing unit, wherein the imaging device comprises:
• a substrate having a front surface and a back surface;
• a plurality of imaging pixels formed in the front surface of the substrate;
• a dielectric layer formed over the back surface of the substrate;
• a light shield formed in the dielectric layer;
• and
• a conductive structure that is formed through the substrate and that provides a bias voltage to the light shield.