Method for manufacturing imaging apparatus, and imaging apparatus

A method for manufacturing an imaging apparatus, comprising the steps of:

• forming trenches in a semiconductor substrate;
• defining a plurality of device formation regions by forming a device isolation insulating film in said trenches;
• and
• forming a semiconductor device in each of said plurality of device formation regions,
• the step of forming said semiconductor device including the steps of
• forming a photoelectric conversion portion, and
• forming a transistor having a gate electrode portion, which processes a charge generated in said photoelectric conversion portion as a signal,
• the step of forming said gate electrode portion of said transistor including the steps of
• forming a gate electrode to traverse a predetermined device formation region of said plurality of device formation regions, in a manner to cover a boundary between said predetermined device formation region and said device isolation insulating film,
• forming a film which is to be an offset spacer film having a first insulating film as a lower-layer film and a predetermined film different from said first insulating film as an upper-layer film, to cover said gate electrode,
• forming the offset spacer film including at least said first insulating film, on a sidewall surface of said gate electrode, by working the film which is to be said offset spacer film, and
• forming a sidewall insulating film on said sidewall surface of said gate electrode, with said offset spacer film being interposed therebetween, wherein
• in the step of forming the film which is to be said offset spacer film, a film containing at least one of nitrogen (N) and hydrogen (H) is formed as said predetermined film,
• in the step of forming said offset spacer film, said first insulating film is worked to leave a first portion which covers said sidewall surface of said gate electrode, and a second portion which extends from a lower end portion of said first portion to a side opposite to a side on which said gate electrode is located, and covers a surface of said predetermined device formation region, and
• in the step of forming said sidewall insulating film, said sidewall insulating film is formed to cover an end surface of said second portion of said first insulating film.