Fin-shaped structure and method thereof
AssigneeUnited Microelectronics Corp.
InventorsChih-Kai Hsu, Yu-Hsiang Hung, Ssu-I Fu, Jyh-Shyang Jenq
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Abstract
A method of forming a fin-shaped structure includes the following steps. A substrate having at least a fin structure thereon is provided. A liner is formed on sidewalls of the fin structure. An oxide layer is formed between the fin structure and the substrate. The fin structure is removed until a bottom layer of the fin structure is reserved, to form a recess between the liner. A buffer epitaxial layer and an epitaxial layer are sequentially formed in the recess. A top part of the liner is removed until sidewalls of the epitaxial layer are exposed. Moreover, a fin-shaped structure formed by said method is also provided.
Claims20
A method of forming a fin-shaped structure, comprising:
- providing a substrate having at least a fin structure thereon;
- forming a liner on sidewalls of the fin structure;
- forming an oxide layer between the fin structure and the substrate;
- removing the fin structure until a bottom layer of the fin structure is reserved, to form a recess between the liner;
- sequentially forming a buffer epitaxial layer and an epitaxial layer in the recess;
- and
- removing a top part of the liner until sidewalls of the epitaxial layer are exposed.
A fin-shaped structure, comprising:
- at least a fin structure disposed on a substrate, wherein the fin structure comprises a silicon layer, a buffer epitaxial layer and an epitaxial layer stacked from bottom to top;
- and
- an oxide layer disposed between the fin structure and the substrate.
Dependencies are inferred from the claim text.