Batch contacts for multiple electrically conductive layers
AssigneeSanDisk Technologies LLC
InventorsMasanori TSUTSUMI, Naoki Ihata, Shinsuke Yada, Ryoichi Honma
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AssigneeSanDisk Technologies LLC
InventorsMasanori TSUTSUMI, Naoki Ihata, Shinsuke Yada, Ryoichi Honma
Estimating the term…
A stepped structure is formed on a stack of an alternating plurality of insulator layers and material layers such that at least two material layers have vertically coincident sidewalls. In one embodiment, the material layers can be electrically conductive layers, and a contact via structure can contact the vertically coincident sidewalls. In another embodiment, a sacrificial spacer can be formed on the vertically coincident sidewalls, and the material layers and the sacrificial spacer can be replaced with a conductive material. A contact via structure can be formed on a set of layers electrically shorted by a vertical conductive material portion that is formed in a volume of the spacer. The contact via structure can provide electrical contact to multiple electrically conductive layers.
A multilevel structure, comprising:
A method of fabricating a multilevel structure, comprising:
A method of fabricating a multilevel structure, comprising:
Dependencies are inferred from the claim text.