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US 2016/0111433 A1Published application
Semiconductor device and method of manufacturing the same
AssigneeSK hynix Inc.
InventorDae Sung EOM
Life of this patent
Estimating the term…
Abstract
Provided are a semiconductor device and a method of manufacturing the same. The semiconductor device may include a dummy structure formed on a peripheral region of a substrate, and insulating spacers configured to pass through the dummy structure and protrude from an upper surface of the dummy structure. The semiconductor device may include first contact plugs configured to pass through the insulating spacers and protrude from upper surfaces of the insulating spacers.
Claims21
A semiconductor device comprising:
- a dummy structure formed on a peripheral region of a substrate and including first material layers stacked on each other and second material layers interposed between the first material layers;
- insulating spacers configured to pass through the dummy structure and protrude from an upper surface of the dummy structure;
- and
- first contact plugs configured to pass through the insulating spacers and protrude from upper surfaces of the insulating spacers.
1 more element
A semiconductor device comprising:
- a substrate including a cell region and a peripheral region;
- a cell stacked structure formed on the cell region of the substrate;
- a dummy stacked structure formed on the peripheral region of the substrate;
- first insulating spacers configured to pass through the dummy stacked structure and protrude from an upper surface of the stacked structure;
- and
- first contact plugs configured to pass through the insulating spacers and protrude from upper surfaces of the insulating spacers.
3 more elements
17-18. (canceled)
A semiconductor device comprising:
- a transistor;
- first material layers, stacked over the transistor;
- second material layers interposed between the first material layers, wherein the second material layers have an etching selectivity greater than those of the first material layers;
- insulating spacers configured to pass through the first and second material layers;
- and
- contact plugs configured to pass through the insulating spacers and protrude from upper surfaces of the insulating spacers,
- wherein the contact plugs are coupled to the transistor.
4 more elements
Dependencies are inferred from the claim text.