Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsJin-Hyuk Yoo, Dae-Hyun Jang, Yoo-Chul Kong, Kyoung-Sub Shin
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Abstract
Provided is a semiconductor device. The semiconductor device includes a conductive pattern disposed on a semiconductor substrate. First and second conductive lines disposed on the conductive pattern and located at the same level as each other, are provided. An isolation pattern is disposed between the first and second conductive lines. A first vertical structure passing through the first conductive line and conductive pattern is provided. A second vertical structure passing through the second conductive line and conductive patterns is provided. An auxiliary pattern passing through the conductive pattern and in contact with the isolation pattern is provided.
Claims20
A semiconductor device comprising:
- first and second portions of a string selection gate line that are spaced apart from each other;
- an isolation pattern between the first and second portions of the string selection gate line, wherein the first and second portions of the string selection gate line comprise respective sides that face each other across the isolation pattern, and wherein the side of the first portion of the string selection gate line comprises a curve;
- and
- a plurality of channel areas that are spaced apart from each other in the first and second portions of the string selection gate line.
A semiconductor device comprising:
- first and second portions of a string selection gate electrode that are separated from each other, wherein a side of the first portion comprises a curve that opposes a side of the second portion;
- a first plurality of channel areas that are spaced apart from each other in the first portion;
- and
- a second plurality of channel areas that are spaced apart from each other in the second portion.
A semiconductor device comprising:
- a selection gate electrode comprising first and second conductive lines that are separated from one another, wherein the first conductive line comprises a first side that opposes a second side of the second conductive line, and wherein the first side of the first conductive line comprises a curved portion that curves into the first conductive line and away from the second conductive line;
- a first plurality of channel areas that are spaced apart from each other along the first conductive line;
- and
- a second plurality of channel areas that are spaced apart from each other along the second conductive line.
Dependencies are inferred from the claim text.