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US 2016/0111430 A1Published application
Contact for semiconductor fabrication
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJHON JHY LIAW
Life of this patent
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Abstract
A semiconductor device includes a substrate, a fin structure on the substrate, the fin structure comprising a doped region, a first gate over the fin structure, the first gate positioned adjacent the doped region, the first gate having a spacer on a first side and having no spacer on a second side between the gate and the doped region, and a conductive plug that contacts the doped region and a top of the gate.
Claims20
A semiconductor device comprising:
- a substrate;
- a fin structure on the substrate, the fin structure comprising a doped region;
- a first gate over the fin structure, the first gate positioned adjacent the doped region, the first gate having a spacer on a first side and having no spacer on a second side between the gate and the doped region;
- and
- a conductive plug that contacts the doped region and a top of the gate.
2 more elements
A semiconductor device comprising:
- a substrate;
- a fin structure formed on the substrate, the fin structure comprising a doped region;
- a first gate on a first side of the doped region, the first gate having sidewall spacers on both sides;
- a second gate on a second side of the doped region, the second side being opposite the first side, the second gate having spacers on both sides;
- a self-aligned contact between the first gate and the second gate;
- and
- a butt contact that is in direct connection with a top of the first gate and the self-aligned contact.
4 more elements
A method for forming a semiconductor device, the method comprising:
- providing a substrate;
- forming a fin structure on the substrate;
- forming a dummy gate over the fin structure;
- forming sidewall spacers on both sides of the dummy gate;
- forming a doped region within the fin structure, the doped region being formed adjacent the dummy gate;
- replacing the dummy gate with a gate;
- removing a spacer from a first side of the gate, the first side being between the gate and the doped region;
- and
- forming a conductive plug that contacts the doped region, the first side of the gate, and a top of the gate.
6 more elements
Dependencies are inferred from the claim text.