Method for manufacturing semiconductor device and semiconductor device

A semiconductor device comprising:

• a first fin-shaped semiconductor layer on a substrate;
• a second fin-shaped semiconductor layer on the substrate;
• a first insulating film around the first fin-shaped semiconductor layer and the second fin-shaped semiconductor layer;
• a first pillar-shaped semiconductor layer on the first fin-shaped semiconductor layer;
• a second pillar-shaped semiconductor layer on the second fin-shaped semiconductor layer,
• where a width of a bottom of the first pillar-shaped semiconductor layer is equal to a width of a top of the first fin-shaped semiconductor layer and a width of a bottom of the second pillar-shaped semiconductor layer is equal to the width of a top of the second fin-shaped semiconductor layer;
• an n-type diffusion layer in an upper portion of the first fin-shaped semiconductor layer and a lower portion of the first pillar-shaped semiconductor layer;
• a p-type diffusion layer in an upper portion of the second fin-shaped semiconductor layer and a lower portion of the second pillar-shaped semiconductor layer;
• a first gate insulating film around the first pillar-shaped semiconductor layer;
• a first metal gate electrode around the first gate insulating film;
• a second gate insulating film around the second pillar-shaped semiconductor layer;
• a second metal gate electrode around the second gate insulating film;
• and
• a metal gate line connected to the first metal gate electrode and the second metal gate electrode and extending in a direction perpendicular to the first fin-shaped semiconductor layer and the second fin-shaped semiconductor layer.