Multiple cpp for increased source/drain area for fets including in a critical speed path
OwnerMark S. RODDER, Rwik SENGUPTA +1inventors
InventorsMark S. RODDER, Rwik SENGUPTA, Borna OBRADOVIC
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Abstract
An integrated circuit comprises at least one block comprising a first cell and a second cell. The first cell comprises a first FET formed with a first contacted poly pitch (CPP), and the second cell comprises a second FET formed with a second CPP. The first CPP is greater than the second CPP. The first FET is part of a critical-speed path, and the second FET is part of a noncritical-speed path, in which the critical-speed path operates at a faster speed than the noncritical-speed path. The first FET and the second FET each comprise a planar FET, a finFET, a gate-all-around FET or a nanosheet FET. A method for forming the integrated circuit is also disclosed.
Claims20
An integrated circuit, comprising:
- at least one block comprising a first cell and a second cell, the first cell comprising a first Field Effect Transistor (FET) formed with a first contacted poly pitch (CPP), and the second cell comprising a second FET formed with a second CPP, the first CPP being greater than the second CPP.
An integrated circuit, comprising:
- a critical-speed circuit path in a block of the integrated circuit, the critical-speed circuit path comprising a first Field Effect Transistor (FET) comprising a first contacted poly pitch (CPP);
- and
- a noncritical-speed circuit path in the block of the integrated circuit, the noncritical-speed path comprising a second FET comprising a second CPP,
- the first CPP being greater than the second CPP.
A method to form Field Effect Transistors (FETs) in a block of an integrated circuit, the method comprising:
- forming a first FET in the block, the first FET comprising a first contacted poly pitch (CPP);
- and
- forming a second FET in the block, the second FET comprising a second CPP,
- the first CPP being greater than the second CPP.
Dependencies are inferred from the claim text.