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US 2016/0111419 A1Published application
Semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorsTatsuya NAITO, Masahito OTSUKI
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Abstract
In order to realize an SJ-MOSFET and an IGBT on a single chip and realize a new arrangement configuration for an SJ-MOSFET section and an IGBT section in a single semiconductor chip, provided is a semiconductor device including a semiconductor substrate; two or more super-junction transistor regions provided on the semiconductor substrate; and one or more IGBT regions that are provided in regions sandwiched by the two or more super-junction transistor regions, in a cross section obtained by cleaving along a pane perpendicular to the semiconductor substrate.
Claims25
A semiconductor device comprising:
- a semiconductor substrate;
- two or more super-junction transistor regions provided on the semiconductor substrate;
- and
- one or more IGBT regions that are provided in regions sandwiched by the two or more super-junction transistor regions, in a cross section obtained by cleaving along a plane perpendicular to the semiconductor substrate.
1 more element
Dependencies are inferred from the claim text.