Semiconductor device and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChin-Shan WANG, Jian-Hong LIN, Shun-Yi LEE
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Abstract
A semiconductor device includes a semiconductor substrate, a transistor, a conductive contact and a capacitor. The transistor is formed on the semiconductor substrate, and the transistor includes a gate, a source and a drain. The conductive contact is formed on and in contact with at least one of the source and the drain. The capacitor includes a first electrode and a second electrode spaced apart from first electrode. At least one of the first and second electrodes extends on substantially the same level as the conductive contact or the gate. A method of forming the semiconductor device is provided as well.
Claims21
A semiconductor device, comprising:
- a semiconductor substrate;
- a transistor formed on the semiconductor substrate, the transistor comprising a source and a drain;
- a conductive contact formed on and in contact with at least one of the source and the drain;
- and
- a capacitor comprising a first electrode and a second electrode spaced apart from the first electrode, wherein both the first and second electrodes extend on substantially the same level as the conductive contact.
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A semiconductor device, comprising:
- a semiconductor substrate;
- a transistor formed on the semiconductor substrate, the transistor comprising a gate, a source and a drain;
- a conductive contact formed on and in contact with at least one of the source and the drain;
- and
- a capacitor comprising a first electrode and a second electrode spaced apart from the first electrode, wherein at least one of the first and second electrodes extends on substantially the same level as the conductive contact, and the first electrode comprises a bottom portion and an upper portion stacked on the bottom portion, wherein the bottom portion and the gate comprise a same material, and the upper portion and the conductive contact comprise a same material.
A semiconductor device, comprising:
- a semiconductor substrate having an active region and a passive region adjacent to the active region;
- a transistor disposed in the active region, and comprising a gate;
- a capacitor disposed in the passive region, and comprising a first electrode and a second electrode spaced apart from the first electrode, wherein both the first and second electrodes extend on substantially the same level as the gate;
- and
- a dielectric material interposed between the first electrode and the second electrode.
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Dependencies are inferred from the claim text.