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US 2016/0111414 A1Published application
Scr with fin body regions for esd protection
AssigneeGlobalfoundries Inc.
InventorsJames P. DI SARRO, Robert J. GAUTHIER, Tom C. LEE, Junjun LI, Souvick MITRA, Christopher S. PUTNAM
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Abstract
An electrostatic discharge protection circuit is disclosed. A method of manufacturing a semiconductor structure includes forming a semiconductor controlled rectifier including a first plurality of fingers between an n-well body contact and an anode in an n-well, and a second plurality of fingers between a p-well body contact and a cathode in a p-well.
Claims20
A semiconductor controlled rectifier in an integrated circuit, comprising:
- a first plurality of fingers between an n-well body contact and an anode in an n-well;
- at least one first dielectric structure between ones of the first plurality of fingers;
- a second plurality of fingers between a p-well body contact and a cathode in a p-well;
- and
- at least one second dielectric structure between ones of the second plurality of fingers.
2 more elements
A semiconductor controlled rectifier, comprising:
- a first plurality of fingers between an n-well body contact and an anode in an n-well;
- a second plurality of fingers between a p-well body contact and a cathode in a p-well;
- a plurality of fins;
- a first dielectric structure on and between ones of the plurality of fins;
- a second dielectric structure on and between the ones of the plurality of fins;
- and
- a semiconductor material layer formed from the plurality of fins merged where the plurality of fins are uncovered by the first dielectric structure and the second dielectric structure.
4 more elements
A semiconductor controlled rectifier, comprising:
- a first plurality of fingers between an n-well body contact and an anode in an n-well;
- a second plurality of fingers between a p-well body contact and a cathode in a p-well;
- and
- shallow trench isolation (STI) elements in a semiconductor material layer;
- wherein the n-well, the n-well body contact, and the anode are in a first region of the semiconductor material layer;
- and
- the p-well, the p-well body contact, and the cathode are in a second region of the semiconductor material layer.
4 more elements
Dependencies are inferred from the claim text.