Structure and method for enhancing robustness of esd device

A method of enhancing robustness of an bipolar electrostatic discharge (ESD) device, comprising:

• providing an emitter region;
• providing an collector region adjacent to the emitter region;
• providing an isolation structure between the emitter region and the collector region;
• and
• modifying a ballasting characteristic at the isolation structure by inserting at least one partition structure therein, each partition structure extends substantially abreast at least one of the emitter and the collector regions.

An electrostatic discharge (ESD) protection device, comprising:

• a first diffusion region of a first dopant type disposed in a first well structure of a second dopant type, defining an emitter;
• a second diffusion region of the first dopant type disposed in a second well structure of the first dopant type arranged adjacent to the first well structure, defining a collector;
• a third diffusion region of the second dopant type disposed in a third well structure of the second dopant type arranged adjacent to the second well structure, defining a base;
• an isolation structure arranged between the first and the second well structures, laterally separating the emitter and the collector;
• and
• a partition structure arranged in the isolation structure,
• wherein the partition structure modifies a ballasting characteristic of the isolation structure.