Methods of forming 3-d circuits with integrated passive devices

A structure comprising circuitry for operation at one or more frequencies at least as high as a radio frequency, the circuitry comprising:

• one or more active devices;
• and
• one or more passive devices electrically coupled to the one or more active devices;
• wherein the structure comprises:
• a first semiconductor substrate comprising at least part of the one or more active devices;
• a second semiconductor substrate overlying the first semiconductor substrate and supporting at least part of the one or more passive devices located over the second semiconductor substrate;
• and
• a third semiconductor substrate located between the first and second semiconductor substrates;
• wherein the circuitry further comprises one or more conductive paths passing through the second and third semiconductor substrates and electrically coupling the one or more passive devices to the one or more active devices;
• wherein the third semiconductor substrate is a semiconductor material reducing electromagnetic coupling between the one or more passive devices and the one or more active devices at least at one of the one or more frequencies;
• and
• wherein the second semiconductor substrate is a semiconductor material reducing electromagnetic coupling between the one or more passive devices and the one or more active devices at least at one of the one or more frequencies.

A method comprising operating, at one or more frequencies which are at least as high as a radio frequency, a circuitry comprising:

• one or more active devices;
• and
• one or more passive devices electrically coupled to the one or more active devices;
• wherein at least part of the one or more active devices is located in a first semiconductor substrate;
• at least part of the one or more passive devices is located over a second semiconductor substrate overlying the first semiconductor substrate;
• and
• a third semiconductor substrate is located between the first and second semiconductor substrates;
• wherein the circuitry comprises one or more conductive paths passing through the second and third semiconductor substrates and electrically coupling the one or more passive devices to the one or more active devices;
• wherein the third semiconductor substrate is a semiconductor material reducing electromagnetic coupling between the one or more passive devices and the one or more active devices at least at one of the one or more frequencies;
• and
• wherein the second semiconductor substrate is a semiconductor material reducing ELECTROMAGNETIC coupling between the one or more passive devices and the one or more active devices at least at one of the one or more frequencies.