Back to results
US 2016/0111397 A1Published application
Semiconductor chip and stacked semiconductor package having the same
AssigneeSK hynix Inc.
InventorHo Young SON
Life of this patent
Estimating the term…
Abstract
A semiconductor chip includes a substrate, through-electrodes passing through the substrate, and a dielectric layer formed between the substrate and the through-electrodes and having a dielectric constant decreasing structure.
Claims20
A stacked semiconductor package comprising:
- a plurality of semiconductor chips each including a substrate, through-electrodes passing through the substrate and a dielectric layer with a reduced dielectric constant formed between the substrate and the through-electrodes where the dielectric layer with a reduced dielectric constant has at least one air gap, and stacked such that through-electrodes of the plurality of semiconductor chips are connected with one another,
- wherein the dielectric layer with a reduced dielectric constant of the lowermost semiconductor chip has a highest dielectric constant among the semiconductor chips, dielectric constants of dielectric layers with a reduced dielectric constant gradually decrease toward the uppermost semiconductor chip, and the dielectric layer with a reduced dielectric constant of the uppermost semiconductor chip has a lowest dielectric constant.
A stacked semiconductor package comprising:
- a plurality of semiconductor chips each including a substrate, through-electrodes passing through the substrate and a dielectric layer with a reduced dielectric constant formed between the substrate and the through-electrodes where the dielectric layer with a reduced dielectric constant has at least one air gap, and stacked such that through-electrodes of the plurality of semiconductor chips are connected with one another,
- wherein the proportion of the air gap within the dielectric layer with a reduced dielectric constant of the lowermost semiconductor chip is the lowest among the semiconductor chips, the proportion of the air gap within dielectric layers with a reduced dielectric constant gradually increase toward the uppermost semiconductor chip, and the proportion of the air gap within the dielectric layer with a reduced dielectric constant of the uppermost semiconductor chip is the highest among the semiconductor chips.
Dependencies are inferred from the claim text.