Semiconductor device and manufacturing method thereof

A semiconductor device comprising:

• a first die comprising a through electrode that electrically connects a conductive member disposed on a first surface of the first die to a corresponding conductive pad disposed on a second surface of the first die opposite the first surface;
• a first chip comprising a first surface on which an interconnection structure is disposed, wherein:
• the interconnection structure comprising a solder structure, and
• the interconnection structure connected to the conductive member on the first surface of the first die via the conductive pad and the through electrode;
• a first encapsulant covering at least a portion of the second surface of the first die and at least a side surface of the first chip;
• and
• a second encapsulant surrounding:
• the first die,
• the first chip, and
• the first encapsulant;
• wherein:
• at least one of the first encapsulant and/or the second encapsulant covers a second surface of the first chip opposite the first surface of the first chip.

A semiconductor device comprising:

• a first die comprising a through electrode that electrically connects a conductive member disposed on a first surface of the first die to a corresponding conductive pad disposed on a second surface of the first die opposite the first surface;
• a first chip comprising a first surface on which an interconnection structure is disposed, wherein:
• the interconnection structure comprising a solder structure, and
• the interconnection structure connected to the conductive member on the first surface of the first die via the conductive pad and the through electrode;
• a first encapsulant covering at least a portion of the second surface of the first die and at least a side surface of the first chip;
• a circuit board comprising a conductive layer on a first surface connected to the first chip via the conductive member, the through electrode, the conductive pad, and the interconnection structure;
• and
• a cover adhesively attached to a surface of the first encapsulant and to the first surface of the circuit board, the cover surrounding the first die and the first chip.

A semiconductor device comprising:

• a first die comprising a through electrode that electrically connects a conductive member disposed on a first surface of the first die to a corresponding conductive pad disposed on a second surface of the first die opposite the first surface;
• a first chip comprising a first surface on which an interconnection structure is disposed, wherein:
• the interconnection structure comprising a solder structure, and
• the interconnection structure connected to the conductive member on the first surface of the first die via the conductive pad and the through electrode;
• a first encapsulant that fills a space between the second surface of the first die and the first surface of the first chip, and that covers at least a side surface of the first chip;
• a circuit board comprising a first surface and a second surface opposite the first surface of the circuit board, the second surface of the circuit board comprising a conductive layer facing the first surface of the first die and connected to the first chip via the conductive member, the through electrode, the conductive pad, and the interconnection structure;
• an under fill that fills a space between the first surface of the first die and the second surface of the circuit board;
• and
• a second encapsulant that contacts at least a side surface of the first die, at least a side surface of the first encapsulant, at least a portion of the second surface of the circuit board, and at least a portion of a second surface of the first chip opposite the first surface of the first chip.