Method of using aluminum layer as etching stop layer for patterning a platinum layer
AssigneeUnited Microelectronics Corp.
InventorsHsin-Yi Lu, Jeng-Ho Wang
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Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a dielectric layer; forming an aluminum layer on the dielectric layer; forming a platinum layer on the aluminum layer; performing a first etching process to remove part of the platinum layer and part of the aluminum layer for forming a patterned platinum layer; and performing a second etching process to remove part of the aluminum layer exposed by the patterned platinum layer and part of the dielectric layer.
Claims16
A method for fabricating semiconductor device, comprising:
- providing a substrate having a dielectric layer;
- forming an aluminum layer on the dielectric layer;
- forming a platinum layer on and cover the aluminum layer entirely;
- performing a first etching process to remove part of the platinum layer and part of the aluminum layer for forming a patterned platinum layer;
- and
- performing a second etching process to remove part of the aluminum layer exposed by the patterned platinum layer and part of the dielectric layer.
A semiconductor device, comprising:
- a substrate, wherein the substrate comprises a dielectric layer;
- an aluminum layer on the dielectric layer;
- and
- a platinum layer on and cover the aluminum layer entirely.
Dependencies are inferred from the claim text.