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US 2016/0111382 A1Published application
Vertical breakdown protection layer
AssigneeGlobalfoundries Inc.
InventorsOliver Aubel, Georg Talut, Thomas Werner
Life of this patent
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Abstract
The present disclosure relates to a semiconductor structure including a plurality of connecting lines arranged on a plurality of vertical levels, the plurality of connecting lines including at least a first connecting line arranged in a first vertical level and a second connecting line arranged in a second vertical level, different from the first vertical level, and a breakdown prevention layer placed in at least part of the vertical space separating the first connecting line from the second connecting line.
Claims20
A semiconductor structure, comprising:
- a plurality of connecting lines arranged on a plurality of vertical levels, said plurality of connecting lines comprising at least a first connecting line arranged in a first vertical level and a second connecting line arranged in a second vertical level that is different from said first vertical level;
- and
- a dielectric breakdown prevention layer positioned in a vertical space separating said first connecting line from said second connecting line, said dielectric breakdown prevention layer and said first connecting line having substantially a same lateral width.
A semiconductor structure, comprising:
- a first metal level, comprising:
- a first dielectric layer;
- and
- a first conductive connecting line embedded in said first dielectric layer;
- and
- a second metal level positioned vertically adjacent to said first metal level, said second metal level comprising:
- a second dielectric layer;
- a second conductive connecting line embedded in said second dielectric layer;
- and
- a dielectric breakdown prevention layer embedded in said second dielectric layer, wherein said dielectric breakdown prevention layer is positioned vertically adjacent to said second conductive connecting line, wherein a portion of said second dielectric layer is positioned between and vertically separates said dielectric breakdown prevention layer from said first conductive connecting line, and wherein said second conductive connecting line has substantially a same lateral width as said dielectric breakdown prevention layer.
7 more elements
Dependencies are inferred from the claim text.