Semiconductor package and manufacturing method of the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsGUAN-YU CHEN, YU-WEI LIN, TIN-HAO KUO, CHEN-SHIEN CHEN
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Abstract
The present disclosure provides a method for manufacturing a semiconductor package. The method includes (1) determining a die warpage value under a predetermined temperature range; (2) determining a difference between a density of a top metal and a density of a bottom metal of a substrate according to the die warpage value; and (3) joining the die and the substrate under the predetermined temperature range. The top metal includes all metal layers overlying a middle layer, and the bottom metal includes all metal layers underlying the middle layer. The middle layer includes a core or a metal layer.
Claims34
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A method for manufacturing a semiconductor package, comprising:
- determining a die warpage value under a predetermined temperature range;
- determining a difference between a density of a top metal and a density of a bottom metal across a substrate according to the die warpage value;
- and
- joining the die and the substrate under the predetermined temperature range,
- wherein the top metal comprises all metal layers overlying a middle layer, and the bottom metal comprises all metal layers underlying the middle layer, the middle layer comprising a core or a metal layer.
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A method for manufacturing a semiconductor package, comprising:
- determining a die warpage value of a die under a predetermined temperature range;
- determining a difference between a density of a top metal and a density of a bottom metal of a substrate according to the die warpage value;
- and
- joining the die and the substrate under the predetermined temperature range,
- wherein the top metal having j metal layers overlying a middle layer, the top metal comprising a top metal density about a sum of densities of j metal layers divided by j;
- and wherein the bottom metal having k metal layers underlying the middle layer, the bottom metal comprising a bottom metal density about a sum of densities of k metal layers divided by k;
- wherein j and k are positive integers, and wherein the bottom metal density is greater than the top metal density.
A method for manufacturing a semiconductor package, comprising:
- determining a die warpage value of a die under a predetermined temperature range;
- determining a difference between a density of a top metal and a density of a bottom metal of a substrate according to the die warpage value;
- and
- joining the die and the substrate under the predetermined temperature range,
- wherein the density of the bottom metal is greater than the density of the top metal.
Dependencies are inferred from the claim text.