Multi-layer dielectric stack for plasma damage protection
AssigneeApplied Materials, Inc.
InventorsBo XIE, Kang Sub YIM, Cheng PAN, Sure NGO, Taewan KIM, Alexandros T. DEMOS
Life of this patent
Estimating the term…
Abstract
Embodiments of the disclosure generally provide multi-layer dielectric stack configurations that are resistant to plasma damage. Methods are disclosed for the deposition of thin protective low dielectric constant layers upon bulk low dielectric constant layers to create the layer stack. As a result, the dielectric constant of the multi-layer stack is unchanged during and after plasma processing.
Claims20
A method of depositing a multi-layer dielectric stack, comprising:
- depositing upon a substrate a first layer having a first thickness, wherein the first layer is formed by delivering one or more organosilicon compounds and one or more porogens in the presence of RF power, and the first layer is formed in a processing region of a plasma chamber;
- depositing a second layer over the first layer, wherein the second layer has a second thickness that is less than the first thickness, and wherein the second layer is formed by delivering one or more organosilicon compounds and one or more porogens in the presence of RF power in the processing region;
- and
- exposing the second layer to an ultraviolet radiation, wherein a porous cross-linked multi-layer dielectric stack is produced, and the porogen is removed from the first layer and second layer.
A method of depositing a multi-layer dielectric stack, comprising:
- depositing upon a substrate a first layer having a first thickness between about 550 Å to about 3000 Å, wherein the first layer is formed by delivering one or more organosilicon compounds and one or more porogens in the presence of RF power, and the first layer is formed in a processing region of a plasma chamber;
- depositing a second layer over the first layer, wherein the second layer has a thickness that is between about 50 Å to about 500 Å, and wherein the second layer is formed by delivering one or more organosilicon compounds and one or more porogens in the presence of RF power in the processing region;
- and
- exposing the second layer to an ultraviolet radiation, wherein a porous cross-linked multi-layer dielectric stack is produced, and the porogen is removed from the first layer and the second layer.
A multi-layer dielectric stack, comprising:
- a first layer that is disposed on a substrate, wherein the first layer comprises a porous cross-linked organosilicon network layer that has a first thickness between about 550 Å and about 3000 Å, a porosity, and a dielectric constant;
- and
- a second layer disposed over the first layer, wherein the second layer comprises a porous cross-linked organosilicon network layer that has a thickness between about 50 Å and about 500 Å, and wherein a porosity of the second layer is less than the porosity of the first layer.
Dependencies are inferred from the claim text.