Structure and formation method of damascene structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTai-Yen PENG, Chia-Tien WU, Jye-Yen CHENG
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Abstract
A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a first conductive feature over the semiconductor substrate. The semiconductor device also includes a first dielectric layer over the semiconductor substrate and surrounding the first conductive feature. The semiconductor device further includes a second conductive feature over the first conductive feature, and the second conductive feature extends into the first conductive feature. In addition, the semiconductor device includes a second dielectric layer over the first dielectric layer and surrounding the second conductive feature.
Claims22
A semiconductor device, comprising:
- a semiconductor substrate;
- a first conductive feature over the semiconductor substrate;
- a first dielectric layer over the semiconductor substrate and surrounding the first conductive feature;
- a second conductive feature over the first conductive feature, wherein the second conductive feature extends into the first conductive feature;
- a second dielectric layer over the first dielectric layer and surrounding the second conductive feature;
- an etch stop layer between the first dielectric layer and the second dielectric layer, wherein the etch stop layer surrounds the first conductive feature;
- and
- an intermediate dielectric layer between the etch stop layer and the second dielectric layer, wherein the intermediate dielectric layer surrounds the first conductive feature and the second conductive feature.
A semiconductor device, comprising:
- a semiconductor substrate;
- a first conductive feature over the semiconductor substrate, wherein the first conductive feature has a recess;
- a first dielectric layer over the semiconductor substrate and surrounding the first conductive feature;
- a second conductive feature over the first conductive feature, wherein a portion of the second conductive feature is in the recess of the first conductive feature;
- and
- a second dielectric layer over the first dielectric layer and surrounding the second conductive feature;
- an etch stop layer between the first dielectric layer and the second dielectric layer, wherein the etch stop layer surrounds the first conductive feature;
- and
- an intermediate dielectric layer between the etch stop layer and the second dielectric layer, wherein the intermediate dielectric layer surrounds the first conductive feature and the second conductive feature.
(canceled)
A method for forming a semiconductor device, comprising:
- forming a first dielectric layer over a semiconductor substrate;
- forming an etch stop layer over the first dielectric layer;
- forming an intermediate dielectric layer over the etch stop layer;
- forming a first conductive feature in the first dielectric layer after the formation of the intermediate dielectric layer;
- forming a second dielectric layer over the intermediate dielectric layer;
- forming a hole in the second dielectric layer to expose the first conductive feature;
- partially removing the first conductive feature to form a recess;
- and
- forming a second conductive feature in the hole and the recess.
(canceled)
Dependencies are inferred from the claim text.