US 2016/0111365 A1 · SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Abstract

A semiconductor device has a resistor area and wiring area selectively disposed on a semiconductor substrate. In this semiconductor device, a second interlayer insulating film is formed above the semiconductor substrate, and a thin-film resistor is disposed on the second interlayer insulating film in the resistor area. Vias that contact the thin-film resistor from below are formed in the second interlayer insulating film. A wiring line is disposed on the second interlayer insulating film in the wiring area. A dummy wiring line that covers the thin-film resistor from above is disposed in a third wiring layer that is in the same layer as the wiring line, and an insulating film is interposed between the thin-film resistor and the dummy wiring line.

Claims20

Dependent claims

A semiconductor device having a resistor area and a wiring area selectively disposed on a semiconductor substrate, comprising:

an interlayer insulating film disposed above the semiconductor substrate;
a thin-film resistor that is disposed on the interlayer insulating film and that is in the resistor area;
a via that is formed in the interlayer insulating film and that contacts the thin-film resistor from below;
a wiring line that is disposed above the interlayer insulating film and that is in the wiring area;
a dummy wiring line that is disposed in a wiring layer in the same layer as the wiring line and that covers the thin-film resistor from above;
and
an insulating film interposed between the thin-film resistor and the dummy wiring line.

4 more elements

A method of manufacturing a semiconductor device having a resistor area and wiring area selectively disposed on a semiconductor substrate, comprising:

forming an interlayer insulating film on the semiconductor substrate;
forming a via in the interlayer insulating film such that the via is selectively exposed on a top of the interlayer insulating film in the resistor area;
forming a thin-film resistor on the interlayer insulating film such that the thin-film resistor is in contact with the exposed via;
forming an insulating film that covers the thin-film resistor;
forming a wiring line on the interlayer insulating film in the resistor area and simultaneously forming a dummy wiring line such that the dummy wiring line covers the thin-film resistor from above via the insulating film.

2 more elements

Dependencies are inferred from the claim text.

Semiconductor device and method of manufacturing the same

Life of this patent

Semiconductor device and method of manufacturing the same

Life of this patent

Abstract

Claims20