Semiconductor device and method for manufacturing the same

A semiconductor device, comprising:

• a cathode region provided on an insulating film and is made by a first conductivity-type thin-film semiconductor layer;
• an anode region provided on the insulating film to form a pn junction with the cathode region and is made by a second conductivity-type thin-film semiconductor layer;
• an interlayer insulating film covering the cathode and anode regions;
• a cathode electrode provided on the interlayer insulating film and is connected to the cathode region through a first contact hole penetrating the interlayer insulating film;
• and
• an anode electrode provided on the interlayer insulating film and is connected to the anode region through a second contact hole penetrating the interlayer insulating film,
• wherein among current paths in the cathode and anode regions, the length of the current path in one of the cathode and anode regions that has a larger sheet resistance is shorter than the length of the other current path, the current path in the cathode region extending from an interface of the pn-junction to an end of the first contact hole closest to the interface, the current path in the anode region extending from the interface to an end of the second contact hole closest to the interface.