Method of utilizing trench silicide in a gate cross-couple construct

A device comprising:

• first and second active fins formed on a substrate;
• a space formed between the first and second active fins
• first and second gate structures formed in parallel across the first and second active fins;
• a gate cut region formed in the space perpendicular to the first and second gate structures;
• a trench silicide (TS) layer formed of tungsten (W), in the space, and between the first and second gate structures, the TS layer crossing the gate cut region;
• and
• a first contact formed across the first gate structure and the TS layer on a first side of the gate cut region and a second contact formed across the second gate structure and the TS layer on a second side of the gate cut region, the TS layer and the first and second contacts cross coupling the first and second gate structures.

A method comprising:

• forming first and second active fins and first and second dummy fins on a substrate, the first and second dummy fins adjacent to each other and between the first and second active fins;
• forming shallow trench insolation (STI) regions between and next to the first and second active fins and the first and second dummy fins;
• forming first and second gate structures in parallel across the first and second active fins and the first and second dummy fins;
• forming first and second capping layers on the first and second self-aligned gate structures, respectively;
• forming a gate cut region by cutting both the first and second self-aligned gate structures and the first and second capping layers between the first and second dummy fins;
• forming a trench silicide (TS) layer of tungsten (W) between the first and second gate structures, the TS layer crossing the gate cut region;
• and
• forming a first self-aligned contact connecting the first gate structure and the TS layer on a first side of the gate cut region and forming a second self-aligned contact connected the second gate structure and the TS layer on a second side of the gate cut region, the TS and the first and second self-aligned contacts cross coupling the first and second gate structures.