Contact liners for integrated circuits and fabrication methods thereof

A structure comprising:

• an integrated circuit structure, the integrated circuit structure comprising:
• a first transistor and a second transistor, the first transistor having at least one of a p-type source region or a p-type drain region and the second transistor having at least one of an n-type source region or an n-type drain region;
• and
• a contact liner, the contact liner disposed at least partially over both the first transistor and the second transistor, the contact liner comprising a first contact liner material with at least a portion directly contacting a surface of at least one the respective source region or the respective drain region of both the first transistor and the second transistor and a second contact liner material with at least a portion directly contacting a surface of at least one the respective source region or the respective drain region of both the first transistor and the second transistor, wherein the first contact liner material is selected to facilitate electrical connection to the at least one p-type source region or p-type drain region of the first transistor, and the second contact liner material is selected to facilitate electrical connection to the at least one n-type source region or n-type drain region of the second transistor.