METHOD TO CO-INTEGRATE SiGe AND Si CHANNELS FOR FINFET DEVICES
AssigneeSTMicroelectronics S.r.l.
InventorsNICOLAS LOUBET, PRASANNA KHARE, QING LIU
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Abstract
A method for co-integrating finFETs of two semiconductor material types, e.g., Si and SiGe, on a bulk substrate is described. Fins for finFETs may be formed in an epitaxial layer of a first semiconductor type, and covered with an insulator. A portion of the fins may be removed to form voids in the insulator, and the voids may be filled by epitaxially growing a semiconductor material of a second type in the voids. The co-integrated finFETs may be formed at a same device level.
Claims25
A method for making co-integrated finFETs, the method comprising:
- forming a plurality of fins of a first semiconductor material for finFETs of a first type;
- removing a portion of the plurality of fins to form voids;
- and
- filling the voids with a second semiconductor material to form fins for finFETs of a second type.
17-25. (canceled)
A method for making a semiconductor device comprising:
- forming a plurality of fins of a first semiconductor material for finFETs of a first type;
- removing a portion of the plurality of fins to form voids;
- and
- epitaxially growing a second semiconductor material in the voids to form fins for finFETs of a second type;
- the first semiconductor material comprising SiGe and the second semiconductor material comprising Si and lacking Ge.
A method for making a semiconductor device comprising:
- forming a first one of a plurality of finFETs on a substrate comprising a first fin, and forming a second one of the plurality of finFETs on the substrate and comprising a second fin so that
- the first fin comprises a lower portion comprising a first semiconductor material extending vertically upward from an upper surface of the substrate, and an upper portion comprising a second epitaxially-grown semiconductor material extending vertically upward from the lower portion, the second epitaxially-grown semiconductor material being a different semiconductor material than the first semiconductor material, and
- the second fin extends vertically upward from the upper surface of the substrate and is epitaxially grown of the first semiconductor material.
Dependencies are inferred from the claim text.