Finfet formation process and structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTsung-Yao Wen, Sai-Hooi Yeong, Sheng-Chen Wang
Life of this patent
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Abstract
A FinFET and methods for forming a FinFET are disclosed. In a method, first trenches are formed in a substrate. First isolation regions are then formed in the first trenches. An epitaxial region is epitaxially grown between the first isolation regions. A second trench is formed by etching in the epitaxial region, forming a plurality of fins. A second isolation region is formed in the second trench. A structure includes a substrate, a first fin on the substrate, a gate dielectric over the first fin, and a gate electrode over the gate dielectric. The first fin comprises an epitaxial layer having a stacking fault defect density less than 1*104 cm−3.
Claims21
A method comprising:
- forming first trenches in a substrate;
- forming first isolation regions in the first trenches;
- epitaxially growing an epitaxial region between the first isolation regions;
- etching the epitaxial region into a plurality of fins, the etching forming a second trench;
- and
- forming a second isolation region in the second trench.
A method comprising:
- forming a plurality of fins on a substrate comprising:
- forming first isolation regions in the substrate;
- forming a recess between the first isolation regions;
- epitaxially growing an epitaxial region in the recess;
- forming a trench in the epitaxial region;
- and
- forming second isolation region in the trench;
- forming a gate dielectric layer over the plurality of fins;
- and
- forming a gate electrode over the gate dielectric layer.
13-20. (canceled)
A method comprising:
- forming first trenches in a substrate;
- forming first isolation regions in the first trenches;
- epitaxially growing an epitaxial region between the first isolation regions;
- forming a mandrel over the epitaxial region;
- conformally depositing a dielectric layer on the mandrel;
- removing the mandrel and portions of the dielectric layer to form a plurality of fin masks, each one of the plurality of fin masks disposed over the epitaxial region;
- etching a second trench in the epitaxial region between each one of the plurality of fin masks;
- and
- forming a second isolation region in the second trench.
Dependencies are inferred from the claim text.