Interconnect structure and fabrication method thereof
AssigneeSemiconductor Manufacturing International (Shanghai) Corporation
InventorsCHENGLONG ZHANG, HAIYANG ZHANG
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Abstract
A method for forming an interconnect structure is provided. The method includes providing a substrate with a surface; and forming a metal layer covering the surface of the substrate and with a desired grain size to reduce grain boundary scattering of the interconnect structure subsequently formed with the metal layer. The method also includes etching the metal layer to form a plurality of metal lines on the surface of the substrate and a plurality of metal pillars on each of the plurality of the metal lines of the interconnect structure; and forming a dielectric layer covering the surface of the substrate, surfaces of the metal lines, and side surfaces of the metal pillars.
Claims20
A method for fabricating an interconnect structure, comprising:
- providing a substrate with a surface;
- forming a metal layer covering the surface of the substrate and with a desired grain size to reduce grain boundary scattering of the interconnect structure subsequently formed with the metal layer;
- etching the metal layer to form a plurality of metal lines on the surface of the substrate and a plurality of metal pillars on each of the plurality of the metal lines of the interconnect structure;
- and
- forming a dielectric layer covering the surface of the substrate, surfaces of the metal lines, and side surfaces of the metal pillars.
An interconnect structure, comprising:
- a substrate;
- a plurality of metal lines formed on the surface of the substrate;
- a plurality of metal pillars on each of the metal lines;
- and
- a dielectric layer covering the surface of the substrate,
- wherein the metal lines and the metal pillars are formed by:
- forming a metal layer covering the surface of the substrate and with a desired grain size to reduce grain boundary scattering of the interconnect structure subsequently formed with the metal layer;
- and
- etching the metal layer to form a plurality of metal lines on the surface of the substrate and a plurality of metal pillars on each of the plurality of the metal lines of the interconnect structure.
Dependencies are inferred from the claim text.