Device and Method for Reducing Contact Resistance of a Metal
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYa-Lien Lee, Hung-Wen Su, Kuei-Pin Lee, Yu-Hung Lin, Yu-Min Chang
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Abstract
A method of fabricating an integrated circuit includes depositing a cap layer on a substrate; depositing a dielectric layer on the cap layer; and forming a trench in the dielectric layer. The method further includes depositing a tantalum nitride (TaN) layer on a sidewall of the trench such that the TaN layer has a greater concentration of nitrogen than tantalum. The method further includes depositing a tantalum (Ta) layer on the TaN layer using physical vapor deposition (PVD); and depositing a metal layer over the Ta layer.
Claims20
A method of fabricating an integrated circuit, the method comprising:
- depositing a cap layer on a substrate;
- depositing a dielectric layer on the cap layer;
- forming a trench in the dielectric layer;
- depositing a tantalum nitride (TaN) layer on a sidewall of the trench such that the TaN layer has a greater concentration of nitrogen than tantalum;
- depositing a tantalum (Ta) layer on the TaN layer using physical vapor deposition (PVD);
- and
- depositing a metal layer over the Ta layer.
A method of fabricating an integrated circuit, the method comprising:
- depositing a cap layer on a substrate;
- depositing a dielectric layer on the cap layer;
- forming a trench in the dielectric layer;
- depositing a tantalum nitride (TaN) layer on a side wall of the trench using physical vapor deposition (PVD) such that the TaN layer has a greater concentration of nitrogen than tantalum;
- depositing a tantalum (Ta) layer on the TaN layer using PVD;
- and
- depositing a metal layer over the Ta layer.
A method of fabricating an integrated circuit, the method comprising:
- depositing a cap layer on a substrate;
- depositing a dielectric layer on the cap layer;
- forming a trench in the dielectric layer;
- depositing a first tantalum nitride (TaN) layer on a side wall of the trench using atomic layer deposition (ALD) such that the first TaN layer has a greater concentration of nitrogen than tantalum;
- depositing a tantalum (Ta) layer on the first TaN layer using physical vapor deposition (PVD);
- and
- depositing a copper-containing metal layer over the Ta layer.
Dependencies are inferred from the claim text.