Semiconductor Device and Method of Forming Same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChien-Chih Chiu, Ming-Chung Liang
Life of this patent
Estimating the term…
Abstract
Semiconductor devices and methods of forming the same are disclosed. A dielectric layer is formed over an underlying layer. A first mask layer and a second mask layer are formed on the dielectric layer such that the first mask layer is interposed between the second mask layer and the dielectric layer. An opening is formed in the first mask layer, the second mask layer and the dielectric layer. Subsequently, the second mask layer is removed. The opening is extended and corners of the first mask layer are rounded. A conductive feature is formed in the extended opening.
Claims20
A method of forming a semiconductor device, the method comprising:
- forming a dielectric layer over an underlying layer;
- forming a first mask layer on the dielectric layer;
- forming an opening, the opening extending through the first mask layer and into the dielectric layer;
- rounding corners of the first mask layer;
- and
- forming a first conductive feature in the opening.
A method of forming a semiconductor device, the method comprising:
- depositing a dielectric layer over an underlying layer;
- depositing a first mask layer and a second mask layer on the dielectric layer, wherein the first mask layer is interposed between the dielectric layer and the second mask layer;
- performing a first etch, the first etch forming an opening, wherein the opening extends through the first mask layer, the second mask layer, and into the dielectric layer;
- removing the second mask layer;
- performing a second etch, the second etch rounding corners of the first mask layer;
- and
- filling the opening with a conductive material, thereby forming a first conductive feature.
A method of forming a semiconductor device, the method comprising:
- providing a substrate;
- forming a first dielectric layer on the substrate;
- forming a second dielectric layer on the first dielectric layer;
- forming a first mask layer and a second mask layer on the second dielectric layer, wherein the first mask layer is interposed between the second dielectric layer and the second mask layer;
- forming a first opening and a second opening, the first opening extending through the first mask layer, the second mask layer, and partially extending through the second dielectric layer, the second opening extending through the first mask layer, the second mask layer, and the second dielectric layer;
- removing the second mask layer;
- extending the first opening and the second opening, thereby forming an extended first opening and an extended second opening;
- rounding corners of the first mask layer;
- and
- forming a first conductive feature in the extended first opening and a second conductive feature in the extended second opening.
Dependencies are inferred from the claim text.