Back to results
US 2016/0111322 A1Published application
Finfet semiconductor device having local buried oxide
AssigneeGlobalfoundries Inc.
InventorsYanxiang LIU, Min-hwa CHI
Life of this patent
Estimating the term…
Abstract
There is set forth herein in one embodiment a FinFET semiconductor device having a fin extending from a bulk silicon substrate, wherein there is formed wrapped around a portion of the fin a gate, and wherein proximate a channel area of the fin aligned to the gate there is formed a local buried oxide region aligned to the gate. In one embodiment, the local buried oxide region is formed below a channel area of the fin.
Claims20
A method comprising:
- forming a substrate having a fin extending therefrom, said fin being contiguous with the substrate;
- forming a local buried oxide region in the fin;
- forming a gate, wherein the local buried oxide region is under the gate;
- defining a channel in the fin above the local buried oxide region, the channel being aligned to the gate and having a first end and a second end;
- forming a source at the first end of the channel;
- and
- forming a drain at the second end of the channel.
4 more elements
A method comprising:
- forming a local buried oxide region in a fin extending contiguous from a substrate;
- and
- fabricating a gate, wherein the fabricating is performed so that the local buried oxide region is under the gate.
A method comprising:
- forming a substrate having a fin contiguous with the substrate extending therefrom;
- forming a local buried oxide region;
- forming a gate aligned with the local buried oxide region;
- defining a channel in the fin, the channel being aligned to the gate and having a first end and a second end;
- defining a source at the first end of the channel;
- and
- defining a drain at the second end of the channel, wherein the local buried oxide region is at least partially formed in the fin, and wherein the local buried oxide region is formed under the gate but not under the source or drain.
4 more elements
Dependencies are inferred from the claim text.