T-shaped fin isolation region and methods of fabrication
AssigneeGlobalfoundries Inc.
InventorsHongliang SHEN, Zhenyu HU, Jin Ping LIU
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Abstract
Semiconductor devices and fabrication methods are provided having an isolation feature within a fin structure which, for instance, facilitates isolating circuit elements supported by the fin structure. The fabrication method includes, for instance, providing an isolation material disposed, in part, within the fin structure, the isolation material being formed to include a T-shaped isolation region and a first portion extending into the fin structure, and a second portion disposed over the first portion and extending above the fin structure.
Claims20
A method comprising:
- providing an isolation feature within a fin structure extending above a substrate, the providing comprising:
- providing an isolation material disposed, in part, within the fin structure, the isolation material being formed to include a T-shaped isolation region and comprise a first portion extending into the fin structure, and a second portion disposed over the first portion and extending above the fin structure;
- and
- wherein providing the isolation material includes disposing the isolation material within and adjacent to at least one sidewall of the fin structure, and wherein the method further comprises providing a layer of masking material over the isolation material, and selectively etching through the layer of masking material to define a protective mask, the protective mask facilitating defining the second portion of the T-shaped isolation region.
(canceled)
A semiconductor device comprising:
- a substrate with a fin structure extending above the substrate;
- a first circuit element and a second circuit element in association with the fin structure;
- a T-shaped isolation region comprising an isolation material disposed partially within the fin structure and separating the first and second circuit elements, the T-shaped isolation region comprising a first portion extending into the fin structure, and a second portion disposed over the first portion and extending above the fin structure;
- said isolation material being disposed within and adjacent to at least one sidewall of the fin structure;
- and
- a protective mask over the isolation material, the protective mask comprising a layer of masking material and defining the second portion of the T-shaped isolation region.
Dependencies are inferred from the claim text.