Back to results
US 2016/0111300 A1Published application
Method of manufacturing semiconductor device
AssigneeMitsubishi Electric Corporation
InventorTatsuto NISHIHARA
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor device includes the steps of placing, on a heat sink made of a metal, a semiconductor element and a frame surrounding the semiconductor element, placing solder on an upper surface of the frame, placing a cap on the solder, and heating the solder while exerting on the cap a force to be applied toward the frame without scrubbing the cap on the frame. In the heating step a heat source is brought into contact with the heat sink and the solder is heated with the heat source.
Claims11
A method of manufacturing a semiconductor device, comprising the steps of:
- placing, on a heat sink made of a metal, a semiconductor element and a frame surrounding the semiconductor element;
- placing solder on an upper surface of the frame;
- placing a cap on the solder and the frame to thereby create, in a first region, a direct abutment between the cap and the frame, and, in a second region, an arrangement in which the solder is positioned between the cap and the frame, wherein the first region is positioned between the second region and the semiconductor element;
- and
- heating step for heating the solder while exerting on the cap a force to be applied toward the frame without scrubbing the cap on the frame;
- wherein in the heating step a heat source is brought into contact with the heat sink and the solder is heated with the heat source, and
- wherein the abutment between the cap and the frame in the first region prevents the solder from intruding from the second region into an interior of the semiconductor device.
4 more elements
Dependencies are inferred from the claim text.